ordering number : enn346g ? 2011, scillc. all rights reserved. jan-2011, rev. 0 www.onsemi.com publication order number: 2sb631_2sb631k_2SD600_2SD600k/d r e t e m a r a pl o b m y ss n o i t i d n o c0 0 6 d , 1 3 6 b s 2k 0 0 6 d , k 1 3 6 b s 2t i n u e g a t l o v e s a b - o t - r o t c e l l o cv o b c 0 0 1 ) (0 2 1 ) (v e g a t l o v r e t t i m e - o t - r o t c e l l o cv o e c 0 0 1 ) (0 2 1 ) (v e g a t l o v e s a b - o t - r e t t i m ev o b e 5 ) (v t n e r r u c r o t c e l l o ci c 1 ) (a ) e s l u p ( t n e r r u c r o t c e l l o ci p c 2 ) (a n o i t a p i s s i d r o t c e l l o cp c 1w 8w e r u t a r e p m e t n o i t c n u jj t 0 5 1 e r u t a r e p m e t e g a r o t sg t s t 0 5 1 + o t 5 5 ( ) : 2sb631, 631k specifications absolute maximum ratings at ta = 25?c package dimensions unit:mm 2009b [2sb631, 631k/2SD600, 600k] features high breakdown voltage v ceo 100/120v, high current 1a. low saturation voltage, excellent h fe linearity. ? c ? c electrical characteristics at ta = 25?c 1 : emitter 2 : collector 3 : base sanyo : to-126 tc=25 ? c r e t e m a r a pl o b m y ss n o i t i d n o c s g n i t a r t i n u n i mp y tx a m e g a t l o v n w o d k a e r b e s a b - o t - r o t c e l l o cv o b c ) r b ( i c i , a 0 1 ) ? ( = e 0 = 0 0 6 d , 1 3 6 b0 0 1 ) ? (v k 0 0 6 d , k 1 3 6 b0 2 1 ) ? (v e g a t l o v n w o d k a r b r e t t i m e - o t - r o t c e l l o cv o e c ) r b ( i c r , a m 1 ) ? ( = e b = 0 0 6 d , 1 3 6 b0 0 1 ) ? (v k 0 0 6 d , k 1 3 6 b0 2 1 ) ? (v e g a t l o v n w o d k a e r b e s a b - o t - r e t t i m ev o b e ) r b ( i e i , a 0 1 ) ? ( = c 0 =5 ) ? (v t n e r r u c f f o t u c r o t c e l l o ci o b c v b c i , v 0 5 ) ? ( = e 0 =1 ) ? (a t n e r r u c f f o t u c r e t t i m ei o b e v b e i , v 4 ) ? ( = c 0 =1 ) ? (a 8.0 4.0 7.0 11.0 1.5 15.5 3.0 1.6 0.8 0.8 0.6 0.5 2.7 4.8 2.4 1.2 123 3.0 continued on next page. 2sb631, 631k/ 2SD600, 600k pnp/npn epitaxial planar silicon transistors 100v/120v, 1a low-frequency power amplifier applications
2sb631, 631k/2SD600, 600k rev.0 i page 2 of 4 i www.onsemi.com retemara pl obmy ss noitidnoc sgnitar tinu ni mp y tx am niagtnerruccd h ef 1v ec i,v5)?(= c am05)?( =* 0 6* 023 h ef 2v ec i,v5)?(= c am005)?( =0 2 tcudorphtdiwdnab-nia gf t v ec i,v01)?(= c am05)?(= )011 (z hm 03 1z hm ecnaticapactuptu oc bo v bc zhm1=f,v01)?( =0 2)03 (f p egatlovnoitarutasrettime-ot-rotcello cv )tas(ec i c i,am005)?(= b am05)?( =5 1.0)? (4 .0)? (v egatlovnoitarutasrettime-ot-esa bv )tas(eb i c i,am005)?(= b am05)?( =5 8.0)? (2 .1)? (v emitlla ft f tiucrictsetdeificepsees )08 (s n 00 1s n emitffo-nru tt ffo tiucrictsetdeificepsees )001 (s n 00 5s n emitegarot st gts tiucrictsetdeificepsees )006 (s n 00 7s n * : the 2sb631/2SD600 are classified by 50ma h fe as follows : kna rdef h ef 021ot0 60 02ot00 10 23ot061 switching time test circuit continued on next page. 100
2sb631, 631k/2SD600, 600k rev.0 i page 3 of 4 i www.onsemi.com p c -- tc 10 8 2 4 3.9 6 5.7 9 7 1 3 5 0 40 2025 60 80 100 120 140 160 0 itr08286 v ce (sat) -- i c itr08284 --0.01 --0.1 --1.0 5 5 7 7 3 3 2 2 --1.0 --10 --100 --1000 222 2 333 3 555 1.0 10 100 1000 222 2 333 3 555 2sb631, k / 2SD600, k mica(is -- 126) with silicone grease 100 100 1.5mm 3 ai 50 50 1.5mm 3 ai 0.01 0.1 2 5 5 3 2 2 5 5 3 3 1.0 10 100120 1.0 23 5 5 3 77 23 2 100ms 10ms 1ms 1s itr08287 a s o dc operation h fe -- i c 10 100 3 5 5 5 7 7 2 3 2 3333 5555 2222 --1.0 --10 --100 --1000 itr08282 2sb631, 631k f=1mhz cob -- v cb itr08280 100 10 5 5 7 7 3 2 2 22 33 55 5 77 7 --1.0 --10 --100 2SD600, 600k f=1mhz cob -- v cb itr08281 100 10 5 5 7 7 3 2 2 22 33 55 5 77 7 1.0 10 100 2sb631, 631k v ce =--5v 2sb631, 631k i c / i b =10 v ce (sat) -- i c itr08285 0.01 0.1 1.0 5 5 5 7 7 7 3 3 2 2 2SD600, 600k i c / i b =10 2sb631, k / 2SD600, k 2sb631 2SD600 2sb631k 2SD600k h fe -- i c 10 100 3 5 5 5 7 7 2 3 2 3333 5555 2222 1.0 10 100 1000 itr08283 2SD600, 600k v ce =5v ta=25 c, single pulse (for pnp, minus sign is omitted.) dc current gain, h fe collector current, i c Cma dc current gain, h fe collector current, i c Cma output capacitance, cob C pf collector-to-base voltage, v cb -- v output capacitance, cob C pf collector-to-base voltage, v cb -- v collector current, i c Cma collector-to-emitter saturation voltage, v ce (sat) C v collector current, i c Cma collector-to-emitter saturation voltage, v ce (sat) C v collector dissipation, p c Cw case temperature, tc C ?c collector-to-emitter voltage, v ce Cv collector current, i c Ca i cp =2a i c =1a
2sb631, 631k/2SD600, 600k 2sb631_2sb631k_2SD600_2SD600k/d literature fulfillment: literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303-675-2175 or 800-344-3860 toll free usa/canada fax: 303-675-2176 or 800-344-3867 toll free usa/canada email : orderlit@onsemi.com n. american technical support : 800-282-9855 toll free usa/canada. europe, middle east and africa technical support : phone: 421 33 790 2910 japan customer focus center phone: 81-3-5773-3850 on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative publication ordering information on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc reserve s the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any partic ular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitatio n special, consequential or incidental damages. scillc strives to supply high-quality high-reliability products and recommends adopting safety measures when designing equipment to avoid accidents or m alfunctions. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. "typical" parameter s which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including "typic als," must be validated for each customer application by customer?s technical experts. scillc shall not be held liable for any claim or suits with regard to a third party?s intellectual property rights which has resulted from the use of the technical information and products mentioned above. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any o ther application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or u nauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affi liates, and distributors harmless against all claims, costs, damages, and expen ses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affi rmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p c -- ta 0.2 0.6 1.0 1.2 0.4 0.8 0 40 20 60 80 100 120 140 160 0 itr08288 no heat sink collector dissipation, p c Cw ambient temperature, ta C ?c
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